Towards an optimal contact metal for CNTFETs

Towards an optimal contact metal for CNTFETs.

Downscaling of the contact length Lc of a side-contacted carbon nanotube field-effect transistor (CNTFET) is challenging because of the rapidly increasing contact resistance as Lc falls below 20-50 nm. If in agreement with existing experimental results, theoretical work might answer the question, which metals yield the lowest CNT-metal contact resistance and what physical mechanisms govern the ...

Tunneling CNTFETs

Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.

Dissipative transport in CNTFETs

Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic scattering and the impact of parameters of inelastic scattering, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed.

Towards an Optimal S

Towards an optimal ontology construction

A subject of ontology, its usage, building and evaluation has been becoming one of the most popular research topics for the last ten years. Such a strong interest to this issue can be explained by great expectations that scientists relate to a widespread ontology’s usage. Following by Uschold [46] we can emphasize 3 main ontology’s purposes: 1. Intelligent communication between different domain...